FGA25N120 IGBT

TheFGA25N120is a high voltage and high currentIGBTwith NPT Trench Technology. The IGBT can switch 1200V with a current rating of upto 50A. It also has a very low gate saturation voltage of 2V allowing it to be used in low voltage driver side designs.

Pin Configuration

Pin Number	Pin Name	Description
1	Gate	Controls the biasing of the IGBT
2	Collector	Current flows in through Source
3	Emitter	电流通过发射极流出

Features

• 高电流高电流IGBT具有低饱和电压
• Collector-Emitter Voltage (VCE): 1200V
• Collector Current (IC): 50A @25°C
• Minimum Gate threshold voltage (VGE) is 3.5V
• Maximum Gate threshold voltage (VGE) is 7.5V
• Gate-Emitter Voltage is (VGE) is ±20V (max)
• 上升时间和秋季时间分别为60n和100N。
• Available in To-3P package

笔记：Complete details can be found in the FGA25N120 IGBT Datasheet linked at the bottom of this page.

Alternatives for FGA25N120

FGA15N120, TA49123, FGA180N33

Where to use FGA25N120 IGBT?

TheFGA25N120is a high voltage high current IGBT, it can be used to switch high voltage values as high a 1200V with a current capability of 50A at 25°C. It can further handle high pulse currents of upto 90A making suitable in application where high voltage and switching current spikes are involved.

Since the IGBT uses Non Punch Though (NPT) Technology it has very low switching loss and low saturation voltage making it feasible to be used in low voltage switching driver designs and get comparatively high efficiency for its switching range. Like all IGBT’s the FGA25N also suffers from low switching speed and high voltage drop across collector and emitter compared with MOSFETs. So if you design requires high efficiency and faster switching device then you should prefer MOSFETs over IGBT. IGBT are preferred in designs where high switching voltage and current is involved.

如何使用FGA25N120？

IGBT是MOSFET和BJT的组合，正如我们从其引脚出口中注意到的那样。它在输入侧具有类似于MOSFET和收集器和发射器的输出侧的栅极，类似于BJT。这表明IGBT只是一个MOSFET，并在其输出侧与BJT结合，以利用MOFET和BJT的优点。

Similar to MOSFET, in IGBT also the gate pin has to be trigger with the minimum gate voltage to close the switch. Here in FGA25N120 the minimum gate saturation voltage is 2V but normally 5V is used in designs, the required gate trigger voltage can be calculated using the collector emitter voltage and collector current that has to be switched, using the graph in the datasheet as shown below

一旦触发栅极，即使在触发电压被拆除后，IGBT仍将保留在类似于MOSFET之后。这是因为IGBT的输入门销上存在栅极电容。要关闭设备，只需将IGBT的栅极连接到地面，就必须放电栅极电容。由于通常，尽管使用了10K的下拉电阻或像IR2104这样的栅极驱动器IC，但IGBT的栅极引脚连接到了地面。

When IGBT is used in switching circuits, care should be taken that it is not used in high frequency designs since the collector emitter voltage drop (switching loss) of the IGBT increase with increase in switching frequency. The graph for the same can be found in datasheet.

申请

• 高电压，高电流开关设计
• 感应加热
• Microwave Oven
• Large Solenoids
• Tesla Coils
• 转换器或逆变器电路

2D model of the component

If you are designing a PCB or Perf board with this component then the following picture from the 2N7000 Datasheet will be useful to know its package type and dimensions.